PART |
Description |
Maker |
HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
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意法半导 STMICROELECTRONICS[STMicroelectronics]
|
2SD780 |
Micro package. High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
|
TY Semiconductor Co., Ltd
|
2SB736 |
Micro package. Complementary to 2SD780. High DC Current Gain: hFE = 200 TYP.
|
TY Semiconductor Co., Ltd
|
2SC4705 |
High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
|
TY Semiconductor Co., L...
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HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5 T-PNP-SI-HV AF PWR AMP High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Vishay Intertechnology, Inc.
|
2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
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SFH6319 SFH6318 |
From old datasheet system LOW CURRENT HIGH GAIN OPTOCOUPLER LOW CURRENT, HIGH GAIN OPTOCOUPLER LOW CURRENT / HIGH GAIN OPTOCOUPLER
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益(为自动 From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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